Xi'an Jiaotong University proposes mechanical bending ferroelectric thin film to control graphene doping method

Abstract Graphene is considered to be a promising high-performance nanoelectronic material due to its superior chemical stability, high electron mobility, mechanical flexibility and high transmittance. In particular, the bipolar nature of graphene (the graphene can be expressed as n-type or p-type after doping) makes it...

Graphene is considered to be a promising high-performance nanoelectronic material due to its superior chemical stability, high electron mobility, mechanical flexibility and high transmittance. In particular, the bipolar nature of graphene (the graphene can be expressed as n-type or p-type after doping) makes it highly competitive with existing electronic devices. So far, a lot of researches have been done on graphene doping, such as ultraviolet radiation in different gas environments, ionic liquid/ion gel or absorption of gas molecules, but these dopings will introduce a second phase, which is irreversible. of.

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In response to the above problems, the Functional Materials and Spintronics Research Center of the School of Materials, Xi'an Jiaotong University designed a new all-inorganic flexible graphene field effect transistor (GFET) using pure mechanical strain and ferroelectric thin film Pb0.92La0.08Zr0.52Ti0. The flexural electric effect of 48O3 successfully achieved the controllable concentration of graphene doping. It was found that the Dirac point of graphene (VDirac) changes linearly with the bending radius (positive bending or reverse bending) of GFET. Compared with other methods for controlling graphene doping, this work avoids the damage caused by hybrid doping on graphene and other substances caused by chemical modification doping, and is reversible, controllable and flexible. Based on the above advantages, the all-inorganic flexible graphene field effect transistor can not only control the graphene doping by bending mechanical stress, but also can detect the bending state of the sample according to the VDirac variation of the flexible ferroelectric GFET.

The research title was titled "Controlling the Dirac point voltage of graphene by mechanically bending the ferroelectric gate of graphene field effect transistor", and was selected as the cover of the current period by the internationally renowned journal Materials Horizons (IF=13.183) in the field of materials science. Associate Professor Ma Chunrui and Prof. Jia Chunlin jointly led the Ph.D. student Hu Guangliang as the first author. Associate Professor Ma Chunrui was the author of the communication. Among them, Associate Professor Liu Ming, Professor Liu Weihua of Xi'an Jiaotong University and Professor Judy Wu of Kansas University. Xi'an Jiaotong University is the first author and the sole author of the paper.

The research has received support from the National Natural Science Foundation of China, the National “973” Project, and the National Youth Fund.

Link to the paper: https://pubs.rsc.org/en/content/articlelanding/2019/mh/c8mh01499j#!divAbstract

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