Researchers at the Moscow State Institute of Nuclear Energy Research University (MEPhI) of the Russian National Research Nuclear University collaborated with experts from the Institute of Metal Physics of the Russian Academy of Sciences' Siberian Branch to develop nanostructures that can increase the operating speed of high-frequency miniature circuits.
The nanostructure is a layered material composed of a common semiconductor. The researchers selected the appropriate conditions for manufacturing the new nanostructures: the transition layer structure, thickness, and composition of the active layer, and therefore, the structural quality was very high. In the case of increasing the indium content of an "active" conductive layer of a material, it helps to reduce the electron mass in the structure and increase their speed, so that the operation of the electronic instrument can also be accelerated.
However, the mechanical pressure of the neighboring lattice will increase accordingly. As physicists gradually increase the indium content in the active layer, they also increase the thick transition layer, thus solving the above problems.
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