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Global researchers have invested a great deal of time and interest in phase change memory (PCM), and Stanford University has just achieved a new breakthrough. Phase transition refers to the migration between two physical states - low resistance crystalline and high resistance amorphous. Although it has demonstrated many advantages in the current storage technology, it is still not perfect. As Extreme Tech pointed out, a major shortcoming in the industry that has not yet been resolved is latency. In the past 30 years, the memory clock rate has greatly increased, but the delay improvements have not been impressive.
Aaron Lindenberg, an associate professor of materials science and engineering at Stanford, which led the study, focused on how fast the phase transition of PCM is. More importantly, they can better use this speed. Their discovery is particularly important for the future development of PCM.
Applying an electric pulse of 0.5 THz to the PCM (5 picoseconds per picosecond = 100 parts per billion second) produces measurable crystalline fibers (theoretical for storing data), all of which occurs in a large amount of material Still in the amorphous state.
Of course, the most important thing is that these filaments are generated at a picosecond speed. Taking into account the nanosecond operating speed of traditional dynamic random access memory (DRAM), PCM can be thousands of times faster than it.
Before putting into practical use, we still have many difficulties to overcome. The article points out that the THz level pulse is far from being deployed on the current motherboard, because its signal can not work well on the current PCB so thin printed copper wire.
In addition, the situation over the years has shown that the price of the memory industry is too elusive, and that manufacturers hope to benefit from a new technology for a long time, but this has greatly affected the popularity of new products.
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