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Material with a corundum structure. The vertical axis is the band gap, and the horizontal axis is the lattice constant. Red is yttrium oxide and lanthanum oxide
Japanese startup FLOSFIA (Headquarters: Kyoto) announced on September 28th, 2016 that together with a research team led by Professor Fujita Michio and Professor Kentaro Kentaro, Graduate School of Engineering, Kyoto University, they successfully developed the “Ga 2 O 3 †power transistor. P-type layer. Compared to SiC (silicon carbide) and GaN (gallium nitride), which are being developed as next-generation power semiconductor materials, cerium oxide has attracted attention due to its ability to produce high-voltage, low-loss power devices at low cost. The research team studied "α-type" yttrium oxide with a "corundum" crystal structure. This time, a p-type layer was realized using iridium oxide (Ir2O3) having a corundum structure like α-type yttrium oxide. With this technology, it is possible to implement a power MOSFET using ruthenium oxide.
To realize a power MOSFET, it is necessary to have an n-type layer and a p-type layer, and it is very difficult to prepare a good p-type layer using yttrium oxide. This time, FLOSFIA and Peking University’s research team turned their attention to yttrium oxide, which has a corundum structure similar to that of α-type yttrium oxide. Since yttrium oxide not only has the same crystal structure, but also has a lattice constant difference of only 0.3% from that of α-type yttrium oxide, a power MOSFET can be produced using n-type yttrium oxide and p-type yttrium oxide. FLOSFIA's goal is to supply MOSFET samples using germanium oxide in 2018.
FLOSFIA will use the "MIST EPITAXY method" to prepare alpha-type yttrium oxide. The same method can also be used for cerium oxide. This method is based on the "Mist CVD" developed by Prof. Fujita and others, and combines autonomous technologies such as impurity concentration reduction technology and multilayering technology. The feature of the MIST EPITAXY method is that it does not require an expensive vacuum device.
The p-type properties of hafnium oxide have been confirmed by the Hall effect test. The test results showed that the hole drift mobility was 2.3 cm 2 /Vs and the carrier concentration was 1.0×10 21 /cm 3 . It has been confirmed that it has a corundum-type structure by X-ray diffraction pattern and diffraction spot.
Details of related technologies have been published at the "77th Applied Physics Society Fall Academic Talk" held from September 13 to 16, 2016. (Reporter: Ujinjin)
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